2SK2216 Datasheet, PDF (1/8 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK2216
Silicon N-Channel MOS FET
Application
UHF power amplifier
Features
• High power output, high gain, high efficiency
PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz)
• Compact package
Suitable for push - pull circuit
Outline
ADE-208-346A
2nd. Edition