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2SK1952 Datasheet, PDF (1/3 Pages) Hitachi Metals, Ltd – Silicon N Channel MOS FET | |||
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2SK1952
Silicon N Channel MOS FET
Application
High speed power switching
Features
⢠Low onâresistance
⢠High speed switching
⢠Low drive current
⢠4 V gate drive device can be driven from
5 V source
⢠Suitable for Switching regulator, DC â DC
converter
⢠Avalanche ratings
TOâ220FM
2
1
3
12 3
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
âââââââââââââââââââââââââââââââââââââââââââ
Drain to source voltage
VDSS
60
V
âââââââââââââââââââââââââââââââââââââââââââ
Gate to source voltage
VGSS
±20
V
âââââââââââââââââââââââââââââââââââââââââââ
Drain current
ID
40
A
âââââââââââââââââââââââââââââââââââââââââââ
Drain peak current
ID(pulse)*
160
A
âââââââââââââââââââââââââââââââââââââââââââ
Bodyâdrain diode reverse drain current
IDR
40
A
âââââââââââââââââââââââââââââââââââââââââââ
Avalanche current
IAP***
40
A
âââââââââââââââââââââââââââââââââââââââââââ
Avalanche energy
EAR***
137
mJ
âââââââââââââââââââââââââââââââââââââââââââ
Channel dissipation
Pch**
35
W
âââââââââââââââââââââââââââââââââââââââââââ
Channel temperature
Tch
150
°C
âââââââââââââââââââââââââââââââââââââââââââ
Storage temperature
Tstg
â55 to +150
°C
âââââââââââââââââââââââââââââââââââââââââââ
* PW ⤠10 µs, duty cycle ⤠1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ⥠50 â¦
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