S10227 Datasheet, PDF (2/4 Pages) Hamamatsu Corporation – CMOS linear image sensor Small plastic package CMOS image sensor

CMOS linear image sensor S10227
s Recommended terminal voltage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Vdd
4.75
5
5.25
V
Clock pulse voltage
High
Low
V(clk)
Vdd - 0.25
-
Vdd
0
Vdd + 0.25
V
-
V
Start pulse voltage
High
Low
V(st)
Vdd - 0.25
-
Vdd
0
Vdd + 0.25
V
-
V
s Electrical characteristics [Ta=25 °C, Vdd=5 V, V(clk)=V(st)=5 V]
Parameter
Symbol
Min.
Clock pulse frequency
f(clk)
0.1
Video data rate
VR
-
Power consumption
P
-
Conversion efficiency
CE
-
Typ.
-
f(clk)
150
(1.6)
Max.
5
-
-
-
Unit
MHz
MHz
mW
µV/e^-
s Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(clk)=V(st)=5 V]
Parameter
Symbol
Min.
Typ.
Max.
Unit
Spectral response range
λ
400 to 1000
nm
Peak sensitivity wavelength
λp
-
700
-
nm
Dark output voltage*²
Vd
-
0.5
5
mV
Saturation output voltage
Vsat
-
4.2
-
V
Readout noise
Nr
-
0.4
-
mV rms
Offset output voltage
Vo
0.6
-
V
Photo response non-uniformity*³ *⁴ PRNU
-
-
±8.5
%
*2: Storage time Ts=10 ms
*3: Uniformity is defined under the condition that all pixels in the device are uniformly illuminated by light which is 50% of the
saturation exposure level and using 510 pixels excluding both ends pixels as follows:
PRNU= ∆X/X × 100 (%)
X: Average output of 510 pixels excluding the pixels at both ends
∆X: Difference between X and maximum or minimum output
*4: Measured with a tungsten lamp of 2856 K

s Spectral response (typical example)
(Ta=25 ˚C)
100
80
60
40
20
s Block diagram
clk
st
8
7
GND Vdd
1
4
Timing
generator
Shift register
Hold circuit
Charge amp array
1
2
3
4
Photodiode
array
511 512
0
400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
KMPDB0258EC
6 EOS
5 Video
KMPDC0167EA
2