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2SK2687-01 Datasheet, PDF (1/3 Pages) Fuji Electric – N-channel MOS-FET
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK2687-01
FAP-IIS Series
N-channel MOS-FET
30V 0,01Ω ±50A 60W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
30
V
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
ID
I D(puls)
V GS
±50
A
±200
A
±16
V
Maximum Avalanche Energy
E AV
520
mJ*
Max. Power Dissipation
PD
Operating and Storage Temperature Range
T ch
T stg
60
W
150
°C
-55 ~ +150
°C
* L=0,277mH, VCC=12V
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
BV DSS
ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=30V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±16V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=25A
VGS=4V
VGS=10V
Forward Transconductance
g fs
ID=25A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=15V
tr
ID=50A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
tf
RGS=10 Ω
I AV
L = 100µH Tch=25°C
Diode Forward On-Voltage
Reverse Recovery Time
V SD
t rr
IF=2xIDR VGS=0V Tch=25°C
IF=2xIDR VGS=0V
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
Min. Typ. Max. Unit
30
V
1,0
1,5 2,0 V
10 500 µA
0,2 1,0 mA
10 100 nA
0,012 0,017 Ω
0,0075 0,01 Ω
22
45
S
2750 4130 pF
1300 1950 pF
600 900 pF
13
20 ns
180 270 ns
55
83 ns
150 230 ns
50
A
1,14 1,71 V
85 130 ns
0,17
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
75 °C/W
2,08 °C/W