2SK2644-01 Datasheet, PDF (1/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK2644-01 FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
FAP-IIS SERIES
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
VGS=±35V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
Outline Drawings
TO-3P
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source peak voltage
Repetitive or non-repetitive
Maximum avalanche energy
Maximum power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID[puls]
VGS
IAV
EAV
PD
Tch
Tstg
Rating
500
±18
±72
±35
18
518.5
125
+150
-55 to +150
Unit
V
A
A
V
A
mJ
W
°C
°C
Remarks
Rch ^<=150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
VDS=500V VGS=0V
VGS=±35V VDS=0V
ID=9A VGS=10V
ID=9A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V RG=10 Ω
ID=18A
VGS=10V
Tch=25°C
Tch=125°C
L=2.93mH Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ.
500
3.5 4.0
10
0.2
10
0.38
5.5 11
1700
280
120
20
100
110
65
18
1.1
620
9.0
Max.
4.5
500
1.0
100
0.45
2600
420
180
30
150
165
100
1.65
Units
V
V
µA
mA
nA
Ω
S
pF
ns
A
V
ns
µC
Thermal characteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Symbol
Rth(ch-c)
Rth(ch-a)
Min. Typ.
Max.
1.0
35.0
Units
°C/W
°C/W
1