2SK2562-01R Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET

2SK2562-01R
FAP-II Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
800
Drain-Gate-Voltage (R_GS=20KΩ)
V DGR
800
Continous Drain Current
ID
7
Pulsed Drain Current
I D(puls)
21
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
PD
80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
800V 2,2Ω 7A 80W
> Outline Drawing
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
V_GS=0V
Gate Threshhold Voltage
V GS(th)
I_D=1mA
V_DS=V_GS
Zero Gate Voltage Drain Current
I DSS
V_DS=800V T_ch=25°C
V_GS=0V
T_ch=125°C
Gate Source Leakage Current
I GSS
V_GS=±30V V_DS=0V
Drain Source On-State Resistance
R DS(on)
I_D=3A
V_GS=10V
Forward Transconductance
g fs
I_D=3A
V_DS=25V
Input Capacitance
C iss
V_DS=25V
Output Capacitance
C oss
V_GS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time t_on (t_on=t_d(on)+t_r)
t d(on)
V_CC=600V
tr
I_D=7A
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
t d(off)
V_GS=10V
Avalanche Capability
tf
R_GS=25 Ω
I AV
L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
I_F=2xI_DR V_GS=0V T_ch=25°C
Reverse Recovery Time
t rr
I_F=I_DR V_GS=0V
Reverse Recovery Charge
Q rr
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
800
V
2,5
3,5 5,0 V
10 500 µA
0,2 1,0 mA
10 100 nA
1,7
2,2 Ω
2
4,5
S
1200 1800 pF
140 210 pF
50
75 pF
35
55 ns
110 170 ns
150 230 ns
100 150 ns
7
A
1,0 1,5 V
800
ns
5,0
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
30 °C/W
1,56 °C/W