English
Language : 

2SK2518-01MR Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET
2SK2518-01MR
FAP-IIA Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
N-channel MOS-FET
200V 0,13Ω 20A 50W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
200
Drain-Gate-Voltage(RGS=20KΩ)
V DGR
200
Continous Drain Current
ID
20
Pulsed Drain Current
I D(puls)
80
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
PD
50
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=200V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=10A
VGS=10V
Forward Transconductance
g fs
ID=10A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=150V
tr
ID=20A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
tf
RGS=10 Ω
Avalanche Capability
I AV
L=100µH
Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr
IF=IDR VGS=0V
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
Min. Typ. Max. Unit
200
V
2,5
3,0 3,5 V
10 500 µA
0,2 1,0 mA
10 100 nA
0,1 0,13 Ω
7,0 15,0
S
1800 2700 pF
320 480 pF
80 120 pF
15
25 ns
60
90 ns
65 100 ns
60
90 ns
20,0
A
1,06 1,59 V
145
ns
900
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
2,5 °C/W