2SK2494-01 Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET

2SK2494-01
F-I Series
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
N-channel MOS-FET
60V 0,025Ω 45A 80W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
60
Drain-Gate-Voltage (R_GS=20KΩ)
V DGR
60
Continous Drain Current
ID
45
Pulsed Drain Current
I D(puls)
200
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
PD
80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
V_GS=0V
Gate Threshhold Voltage
V GS(th)
I_D=10mA
V_DS=V_GS
Zero Gate Voltage Drain Current
I DSS
V_DS=60V
T_ch=25°C
V_GS=0V
T_ch=125°C
Gate Source Leakage Current
I GSS
V_GS=±30V V_DS=0V
Drain Source On-State Resistance
R DS(on)
I_D=25A
V_GS=10V
Forward Transconductance
g fs
I_D=25A
V_DS=25V
Input Capacitance
C iss
V_DS=25V
Output Capacitance
C oss
V_GS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time t_on (t_on=t_d(on)+t_r)
t d(on)
V_CC=30V
tr
I_D=45A
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
t d(off)
V_GS=10V
tf
R_GS=25 Ω
Avalanche capability
I AV
L=100µH Tch=25°C
Diode Forward On-Voltage
V SD
I_F=2xI_DR V_GS=0V T_ch=25°C
Reverse Recovery Time
t rr
I_F=I_DR V_GS=0V
Reverse Recovery Charge
Q rr
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
60
V
2,5
3,0 3,5 V
10 500 µA
0,2 1,0 mA
10 100 nA
0,017 0,025 Ω
11
22
S
2000 3000 pF
800 1200 pF
300 450 pF
25
40 ns
150 230 ns
140 210 ns
125 190 ns
45
A
1,30 1,95 V
60
ns
0,1
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
75 °C/W
1,56 °C/W