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2SK2272-01R Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET
2SK2272-01R
FAP-IIA Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Avalanche Proof
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
900
Drain-Gate-Voltage (RGS=20KΩ)
V DGR
900
Continous Drain Current
ID
5
Pulsed Drain Current
I D(puls)
20
Gate-Source-Voltage
V GS
±30
Max. Power Dissipation
PD
80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
900V 2,8Ω 5A 80W
> Outline Drawing
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=900V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=2,5A
VGS=10V
Forward Transconductance
g fs
ID=2,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=600V
tr
ID=5A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
tf
RGS=10 Ω
I AV
L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr
IF=IDR VGS=0V
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
Min. Typ. Max. Unit
900
V
2,5
3,0 3,5 V
10 500 µA
0,2 1,0 mA
10 100 nA
2,0
2,8 Ω
3,0
6,0
S
1200 1800 pF
120 180 pF
40
60 pF
25
40 ns
25
40 ns
85 130 ns
45
70 ns
5,0
A
0,93 1,40 V
400
ns
1,5
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
30,0 °C/W
1,56 °C/W