2SK2166-01R Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET

2SK2166-01R
FAP-IIIA Series
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Avalanche Proof
- Including G-S Zener-Diode
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC Converters
N-channel MOS-FET
60V 0,03Ω 40A 80W
> Outline Drawing
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
60
Drain-Gate-Voltage (R_GS=20KΩ)
V DGR
60
Continous Drain Current
ID
40
Pulsed Drain Current
I D(puls)
160
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
PD
80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
V_GS=0V
Gate Threshhold Voltage
V GS(th)
I_D=1mA
V_DS=V_GS
Zero Gate Voltage Drain Current
I DSS
V_DS=60V
T_ch=25°C
V_GS=0V
T_ch=125°C
Gate Source Leakage Current
I GSS
V_GS=±16V V_DS=0V
Drain Source On-State Resistance
R DS(on)
I_D=20A
V_GS=4V
I_D=20A
V_GS=10V
Forward Transconductance
g fs
I_D=20A
V_DS=25V
Input Capacitance
C iss
V_DS=25V
Output Capacitance
C oss
V_GS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time t_on (t_on=t_d(on)+t_r)
t d(on)
V_CC=30V
tr
I_D=40A
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
t d(off)
V_GS=10V
Avalanche Capability
tf
R_GS=25 Ω
I AV
L=100µH
T_ch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
I_F=2xI_DR V_GS=0V T_ch=25°C
Reverse Recovery Time
t rr
I_F=I_DR V_GS=0V
Reverse Recovery Charge
Q rr
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
60
V
1,0
1,5 2,0 V
500 µA
1,0 mA
10 µA
0,030 0,050 Ω
0,20 0,030 Ω
13
25
S
1600 2400 pF
580 870 pF
320 480 pF
15
23 ns
90 140 ns
300 450 ns
190 290 ns
40
A
40 A
160 A
1,4
V
80
ns
0,17
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
30 °C/W
1,56 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: [phone]; Fax: [phone]