2SK2018-01L Datasheet, PDF (1/2 Pages) Fuji Electric – N-channel MOS-FET

2SK2018-01L,S
FAP-III Series
> Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
- Avalanche Proof
> Outline Drawing
N-channel MOS-FET
60V 0,1Ω 10A 20W
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
60
Drain-Gate-Voltage(R_GS=20KΩ)
V DGR
60
Continous Drain Current
ID
10
Pulsed Drain Current
I D(puls)
40
Gate-Source-Voltage
V GS
±20
Max. Power Dissipation
PD
20
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
> Equivalent Circuit
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (T_C=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
V_GS=0V
Gate Threshhold Voltage
V GS(th)
I_D=1mA
V_DS=V_GS
Zero Gate Voltage Drain Current
I DSS
V_DS=60V
T_ch=25°C
V_GS=0V
T_ch=125°C
Gate Source Leakage Current
I GSS
V_GS=±20V V_DS=0V
Drain Source On-State Resistance
R DS(on)
I_D=5A
V_GS=4V
I_D=5A
V_GS=10V
Forward Transconductance
g fs
I_D=5A
V_DS=25V
Input Capacitance
C iss
V_DS=25V
Output Capacitance
C oss
V_GS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time t_on (t_on=t_d(on)+t_r)
t d(on)
V_CC=30V
tr
I_D=5A
Turn-Off-Time t_off (t_on=t_d(off)+t_f)
t d(off)
V_GS=10V
Avalanche Capability
tf
R_GS=25Ω
I AV
L=100µH
T_ch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
I_F=2xI_DR V_GS=0V T_ch=25°C
Reverse Recovery Time
t rr
I_F=I_DR V_GS=0V
Reverse Recovery Charge
Q rr
-dI_F/dt=100A/µs T_ch=25°C
Min. Typ. Max. Unit
60
V
1,0
1,5 2,5 V
10 500 µA
0,2 1,0 mA
10 100 nA
0,11 0,16 Ω
0,07 0,1 Ω
4
8
S
500 750 pF
200 300 pF
80 120 pF
10
15 ns
20
30 ns
100 150 ns
50
75 ns
10
A
10 A
40 A
1,2
V
100
ns
0,15
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
°C/W
6,25 °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX [phone] - http://www.collmer.com