LPS200P70 Datasheet, PDF (1/3 Pages) Filtronic Compound Semiconductors – PACKAGED LOW NOISE PHEMT

• FEATURES
♦ 0.7 dB Noise Figure at 12 GHz
♦ 12 dB Associated Gain at 12 GHz
♦ 0.6 dB Noise Figure at 2 GHz
♦ 14 dB Associated Gain at 2 GHz
♦ Low DC Power Consumption
LPS200P70
PACKAGED LOW NOISE PHEMT
• DESCRIPTION AND APPLICATIONS
The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an
Electron-Beam direct-write 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom”
Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure
and processing have been optimized for high dynamic range. The LPS200’s active areas are
passivated with Si₃N₄, and the P70 ceramic package is ideal for low-cost, high-performance
applications that require a surface-mount package.
Typical applications include low noise receiver preamplifiers for commercial applications including
Cellular/PCS systems and broad band commercial instrumentation.
• ELECTRICAL SPECIFICATIONS @ T_Ambient = 25°C*
Parameter
Symbol
Test Conditions
Saturated Drain-Source Current** IDSS
V_DS = 2 V; V_GS = 0 V
Noise Figure
NF
Associated Gain at minimum NF
G_A
Transconductance
G_M
V_DS = 2 V; I_DS = 25% I_DSS
V_DS = 2 V; I_DS = 25% I_DSS
V_DS = 2 V; V_GS = 0 V
Gate-Source Leakage Current
I_GSO
V_GS = -3 V
Pinch-Off Voltage
V_P
V_DS = 2 V; I_DS = 1 mA
*frequency=12 GHz, unless otherwise noted
**Formerly binned as: LPS200P70-1 = 15-30 mA and LPS200P70–2 = 31-50 mA
Min Typ Max Units
15
50 mA
0.7 1.3 dB
10.5 12
dB
60
80
mS
1
15 µA
-0.25 -0.8 -1.5
V
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Revised: 1/20/01
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