FFB2222A Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – NPN Multi-Chip General Purpose Amplifier

Discrete POWER & Signal
Technologies
FFB2222A
E2
B2
C1
C2
B1
pin #1 E1
SC70-6
Mark: .1P
FMB2222A
C2
E1
C1
B2
E2
pin #1 B1
SuperSOT™-6
Mark: .1P
MMPQ2222A
B4
E4
B3
E3
B2
E2
B1
E1
C4
C4
C3
C3
C2
C2
C1
SOIC-16 ^C1
NPN Multi-Chip General Purpose Amplifier
This device is for use as a medium power amplifier and switch requiring collector
currents up to 500 mA. Sourced from Process 19.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
40
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC
Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
FFB2222A
PD
Total Device Dissipation
300
Derate above 25°C
2.4
RθJA
Thermal Resistance, Junction to Ambient
415
Effective 4 Die
Each Die
Max
FMB2222A
700
5.6
180
MMPQ2222A
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
© 1998 Fairchild Semiconductor Corporation