FDZ7064S Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET BGA MOSFET

May 2004
FDZ7064S
30V N-Channel PowerTrench SyncFET^TM BGA MOSFET
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC power
supplies. Combining Fairchild’s 30V PowerTrench
SyncFET process with state of the art BGA packaging, the
FDZ7064S minimizes both PCB space and RDS(ON). This
BGA SyncFET embodies a breakthrough in both packaging
and power MOSFET integration which enables the device
to combine excellent thermal transfer characteristics, high
current handling capability, ultra-low profile packaging, low
gate charge, ultra-low reverse recovery charge and low
RDS(ON).
Applications
• DC/DC converters
• 13.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V
RDS(ON) = 9 mΩ @ VGS = 4.5 V
• Occupies only 14 mm² of PCB area. Only 42% of the
area of SO-8
• Ultra-thin package: less than 0.8 mm height when
mounted to PCB
• 3.5 x 4 mm² Footprint
• High power and current handling capability.
Pin 1
D
D
D
D
D
D
D
S
S
S
S
D
D
S
S
S
S
D
D
S
S
S
S
D
D
G
S
S
S
D
Bottom
Pin 1
Top
D
G
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R¡£¢ ¤
Thermal Resistance, Junction-to-Ambient
R¡£¢ ¥
Thermal Resistance, Junction-to-Ball
R¡£¢ ¦
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
7064S
Device
FDZ7064S
Reel Size
13”
Ratings
30
±16
13.5
60
2.2
–55 to +150
56
4.5
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000
©2004 Fairchild Semiconductor Corporation
FDZ7064S Rev. B2 (W)