FDZ298N Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel 2.5 V Specified PowerTrench BGA MOSFET

February 2004
FDZ298N
N-Channel 2.5 V Specified PowerTrench^® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state of the art BGA
packaging, the FDZ298N minimizes both PCB space
and RDS(ON). This BGA MOSFET embodies a
breakthrough in packaging technology which enables
the device to combine excellent thermal transfer
characteristics, high current handling capability, ultra-
low profile packaging, low gate charge, and low RDS(ON).
Applications
• Battery management
• Battery protection
Features
• 6 A, 20 V
RDS(ON) = 27 mΩ @ VGS = 4.5 V
RDS(ON) = 39 mΩ @ VGS = 2.5 V
• Occupies only 2.25 mm² of PCB area.
Less than 50% of the area of a SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability.
D
D
D
S
S
S
G
S
S
Pin 1
Bottom
Top
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
C
FDZ298N
7”
D
G
S
Ratings
20
±12
6
10
1.7
–55 to +150
72
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDZ298N Rev B1 (W)