FDZ2554PZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET

August 2004
FDZ2554PZ
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench^® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state-of-the-art BGA
packaging, the FDZ2554PZ minimizes both PCB space
and RDS(ON). This monolithic common drain BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• Battery management
• Load switch
• Battery protection
Features
• –6.5 A, –20 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V
RDS(ON) = 45 mΩ @ VGS = –2.5 V
• >4800V ESD Protection
• Occupies only 0.10 cm² of PCB area:
1/3 the area of SO-8
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
• Outstanding thermal transfer characteristics:
significantly better than SO-8
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
Pin 1
DDD
S
S
S
Q2
GSS
S
S
S
Q1
GSS
DDD
Bottom
Pin 1
Top
S
G
Q1
D
Q2
G
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJB
Thermal Resistance, Junction-to-Ball
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2554Z
FDZ2554PZ
7’’
Ratings
–20
±12
–6.5
–20
2.1
–55 to +150
60
6.3
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDZ2554PZ Rev. C3 (W)