FDZ2553N Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Monolithic Common Drain N-Channel 2.5V Specified PowerTrench

February 2003
FDZ2553N
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state-of-the-art BGA
packaging, the FDZ2553N minimizes both PCB space
and RDS(ON). This Monolithic Common Drain BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• Battery management
• Load switch
• Battery protection
Features
• 9.6 A, 20 V.
RDS(ON) = 14 mΩ @ VGS = 4.5 V
RDS(ON) = 20 mΩ @ VGS = 2.5 V
• Occupies only 0.10 cm² of PCB area:
1/3 the area of SO-8.
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB.
• Outstanding thermal transfer characteristics:
significantly better than SO-8.
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
Pin 1
DDD
S
S
S
Q2
GSS
S
S
S
Q1
GSS
DDD
Bottom
Pin 1
Top
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJB
Thermal Resistance, Junction-to-Ball
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2553N
FDZ2553N
7’’
©2003 Fairchild Semiconductor Corporation
S
G
Q1
D
Q2
G
S
Ratings
20
±12
9.6
20
2.1
–55 to +150
60
6.3
0.6
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDZ2553N Rev D2 (W)