FDY2000PZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual P-Channel (-2.5V) Specified PowerTrenchR MOSFET

January 2006
FDY2000PZ
Dual P-Channel (– 2.5V) Specified PowerTrench^® MOSFET
General Description
This Dual P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = – 2.5v.
Applications
• Li-Ion Battery Pack
6
5
4
Features
• – 350 mA, – 20 V RDS(ON) = 1.2 Ω @ VGS = – 4.5 V
RDS(ON) = 1.6 Ω @ VGS = – 2.5 V
• ESD protection diode (note 3)
• RoHS Compliant
S₁ 1
6 ^D1
1
2
3
G_{1 2}
D₂ 3
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
Ratings
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation (Steady State)
(Note 1a) 1a)
(Note 1a) 1a)
(Note 1b) 1
Operating and Storage Junction Temperature
Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 1a)
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b) 1
Package Marking and Ordering Information
Device Marking
Device
Reel Size
A
FDY2000PZ
7 ’’
– 20
±8
– 350
– 1000
625
446
–55 to +150
200
280
Tape width
8 mm
5 G₂
4 S₂
Unit
s
V
V
mA
mW
°C
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDY2000PZ Rev A
www.fairchildsemi.com