SW840 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – N-Channel MOSFET

SAMWIN
SW840
Features
N-Channel MOSFET
BV_DSS (Minimum)
R_DS(ON) (Maximum)
I_D
Qg (Typical)
P_D (@TC=25 )
: 500 V
: 0.85 ohm
: 8.5 A
: 36 nc
: 125 W
General Description
This power MOSFET is produced with advanced
VDMOS process, planar stripe. This technology enable
power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge
and especially excellent avalanche characteristics. This
power MOSFET is usually used at high efficient DC to
DC converter block, high efficiency switch mode power
supplies, power factor correction, electronic lamp ballast
based on half bridge.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain to Source Voltage
Continuous Drain Current (@Tc=25 )
Continuous Drain Current (@Tc=100 )
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25 )
Derating Factor above 25
(Note 1)
(Note 2)
(Note 1)
(Note 3)
T_STG,T_J
T_L
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
Value
500
8.5
6.2
34
30
360
12.5
4.5
125
1.18
-55~+150
300
Thermal Characteristics
Symbol
R _JC
R _CS
R _JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min
Typ
Max
-
-
1.0
-
0.5
-
-
-
62.5
1/6
REV0.1
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
04.10.15