SX1018 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – Photomicrosensor (Through-beam)

EE-SX1018
Dimensions
Note: All units are in millimeters unless otherwise indicated.
Four, C0.3
0.5±0.05
Optical
axis
Four, 0.5
Four, 0.25
Cross section AA
Internal Circuit
K
C
A
E
Terminal No.
A
K
C
E
Name
Anode
Cathode
Collector
Emitter
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
3 mm max.
3 t mm v 6
6 t mm v 10
10 t mm v 18
18 t mm v 30
Tolerance
±0.3
±0.375
±0.45
±0.55
±0.65
Photomicrosensor
(Through-beam)
Features
• Compact model with a 2-mm-wide slot.
• PCB mounting type.
• High resolution with a 0.5-mm-wide slit.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rated
value
Emitter
Forward current I_F
50 mA
(see note 1)
Pulse forward I_FP
current
1A
(see note 2)
Receiver
Reverse voltage
Collector–Emitter
voltage
V_R
V_CEO
4V
30 V
Emitter–Collector V_ECO
---
voltage
Collector current I_C
Collector
P_C
dissipation
20 mA
100 mW
(see note 1)
Ambient
Operating
temperature
Topr
–25°C to
85°C
Storage
Tstg
–30°C to
100°C
Soldering temperature
Tsol
260°C
Note:
1. Refer to the temperature rating chart if the ambient
temperature exceeds 25°C.
2. The pulse width is 10 µs maximum with a frequency
of 100 Hz.
3. Complete soldering within 10 seconds.
Electrical and Optical Characteristics (Ta = 25°C)
Emitter
Receiver
Item
Forward voltage
Reverse current
Peak emission wavelength
Light current
Dark current
Leakage current
Collector–Emitter saturated
voltage
Symbol
V_F
I_R
λ_P
I_L
I_D
I_LEAK
V_CE (sat)
Value
1.2 V typ., 1.5 V max.
0.01 µA typ., 10 µA max.
940 nm typ.
0.5 mA min., 14 mA max.
2 nA typ., 200 nA max.
---
0.1 V typ., 0.4 V max.
Peak spectral sensitivity
λ_P
wavelength
Rising time
tr
Falling time
tf
850 nm typ.
4 µs typ.
4 µs typ.
Condition
I_F = 30 mA
V_R = 4 V
I_F = 20 mA
I_F = 20 mA, V_CE = 10 V
V_CE = 10 V, 0 ȏx
---
I_F = 20 mA, I_L = 0.1 mA
V_CE = 10 V
V_CC = 5 V, R_L = 100 Ω, I_L = 5 mA
V_CC = 5 V, R_L = 100 Ω, I_L = 5 mA
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