SW830.pdf Datasheet, PDF (1/6 Pages) –

SAMWIN
Features
N-Channel MOSFET
BV_DSS (Minimum)
R_DS(ON) (Maximum)
I_D
Qg (Typical)
P_D (@TC=25 )
: 500 V
: 1.4 ohm
: 5.0 A
: 28 nc
: 73 W
SW830
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have
better characteristics, such as fast switching time,
low on resistance, low gate charge and
especially excellent avalanche characteristics. It
is mainly suitable for half bridge or full bridge
resonant topology like a electronic ballast, and
also low power switching mode power appliances.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
Drain to Source Voltage
Continuous Drain Current (@Tc=25℃)
Continuous Drain Current (@Tc=100℃)
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25℃)
Derating Factor above 25℃
(Note 1)
(Note 2)
(Note 1)
(Note 3)
T_STG,T_J
T_L
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
Value
500
5.5
3.7
22
±30
390
7.3
3.5
73
0.58
-55~+150
300
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min
Typ
Max
-
-
1.71
-
0.5
-
-
-
62
1/6
REV0.1
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Units
℃/ W
℃/ W
℃/ W
04.10.1