SW2N60 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN.

SAMWIN
SW2N60
Features
zN-Channel MOSFET
zBV_DSS (Minimum)
zR_DS(ON) (Maximum)
zI_D
zQg (Typical)
zP_D (@TC=25 ℃)
: 600 V
: 5.0 ohm
: 2.0 A
: 16 nc
: 50 W
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is
usually used at high efficient DC to DC converter
block and SMPS. It’s typical application is TV and
monitor.
D
TO-252
TO-220
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
Drain to Source Voltage
Continuous Drain Current (@Tc=25℃)
Continuous Drain Current (@Tc=100℃)
I_DM
V_GS
E_AS
E_AR
dv/dt
P_D
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25℃)
Derating Factor above 25℃
(Note 1)
(Note 2)
(Note 1)
(Note 3)
T_STG,T_J
T_L
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from
Case for 5 seconds.
Thermal Characteristics
Value
TO-220
TO-251(2)
600
2.0
1.8
1.67
1.47
8.0
7.2
±30
110
5.0
4.2
5.0
50
42
0.4
0.34
-55~+150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case Max
Thermal Resistance, Case-to-Sink
TYP.
Thermal Resistance, Junction-to-Ambient Max
Value
TO-220
TO-251(2)
2.4
2.9
0.5
62.5
Units
℃/ W
℃/ W
℃/ W
1/6
REV0.2
04.11.1