LB120A Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
LB120A
TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
Description
Designed for use in high-voltage switching
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
6
V
Collector Current (DC)
IC
100
mA
Collector Current (pulse)
IC
200
mA
Base Current (DC)
IB
20
mA
Base Current (pulse)
IB
40
mA
Total Power Dissipation
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
PD
PD
TJ
TSTG
0.8
W
7
W
+150
o_C
-55 to +150 ^oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
2^o Typ
2^o Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5^oTyp. 5^oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Collector-Base Breakdown Volatge
BVCBO 600
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO 400
-
-
V
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
V
Collector Cutoff Current
ICBO
-
ICEO
-
-
10
µA
-
10
µA
Emitter Cutoff Current
IEBO
-
-
10
µA
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
0.4
V
- 0.75 V
-
1
V
DC Current Gain⁽¹⁾
hFE1
8
-
-
-
hFE2
10
-
36
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Test Conditions
IC=100µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCB=550V, IE=0
VCE=400V, IB=0
VEB=6V, IC=0
IC=50mA, IB=10mA
IC=100mA, IB=20mA
IC=50mA, IB=10mA
IC=10mA, VCE=10V
IC=50mA, VCE=10V