GDU91-20222 Datasheet, PDF (1/4 Pages) Dynex Semiconductor – Gate Drive Unit

GDU 91 20222
GDU 91-20222
Gate Drive Unit
Replaces March 1998 version, DS4570-3.1
DS4570-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
I_FGM
I
G(ON)
dI_GQ/dt
30A
4A
30A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V = +5V
1
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
V = +15V
2
DG408BP
V = -15V
3
500mm CO - AX cable type RC5327230
Honeywell sweetspot HFE 4020 - 013
30mA
Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
I_V1
+5V PSU current
I_V2
+15V PSU current
I_V3
V
1(Min)
V
2(Min)
V_3(Min)
I_FGM
I_G(ON)
dI_FG/dt
dI_GQ/dt
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, I_T = 1000A
GTO T_j = 125˚C
-
-
-
-
-
Measured 10 - 75% I_FGM
I = 1000A, 90% I - 50% I
T
G(ON)
GQM
Min. Typ. Max. Units
-
-
2.2
A
-
-
0.55
A
-
-
3.8
-
14.0
-
14.0
-
30
-
-
4
-
30
-
30
3.0
A
-
V
-
V
-
V
-
A
-
A
-
A/µs
-
A/µs
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