SX5817 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea _{SX5817--- SX5819}
SURFACE MOUNT SCHOTTKY
BARRIER RECT IFIERS
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC SOD-123FL,molded plastic
Terminals: Solderable per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Weight: 0.0008 ounces,0.22 grams
Mounting position: Any
SOD-123FL
Cathode Band
Top View
2.80.1
0.60.25
3.70.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SX5817
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
V_RRM
V_RMS
V_DC
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=70
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
@ 3.0A ^VF
S2
20
14
20
0.45
0.75
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
SX5818
S3
30
21
30
1.0
25.0
0.55
0.875
1.0
10.0
110
50
- 55 ---- + 125
- 55 ---- + 150
SX5819
S4
40
28
40
UNITS
V
V
V
A
A
0.60
V
0.90
mA
pF
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