2SA1015 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)

DONGGUAN NANJING ELECTRONICS LTD.,
TO-92 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
Power dissipation
Collector-Base Voltage
-50
V
Collector-Emitter Voltage
-50
V
Emitter-Base Voltage
-5
V
Collector Current -Continuous
-150
mA
Collector Power Dissipation
400
mW
Thermal Resistance rom Junction o
/W
Ambient
Junction Temperature
1
Storage Temperature
-55
1.EMITTER
2.COLLECTOR
3.BASE
V_(BR)CBO I_C= -100 A, I_E=0
-50
V_(BR)CEO I_C= -0.1mA, I_B=0
-50
V(BR)EBO IE= -100 A, IC=0
-5
I_CBO
V_CB= -50V,I_E=0
I_CEO
V_CE= -50V, I_B=0
I_EBO
V_EB= -5V, I_C=0
hFE
VCE= -6V, IC= -2mA
70
VCE(sat) IC= -100mA, IB= -10mA
VBE(sat) IC= -100mA, IB= -10mA
f_T
VCE= -10 V, IC= -1mA
f =30MHz
80
Cob
VCB=-10V,IE=0,f=1MH
NF
VCE= -6 V, IC= -0.1mA,
f =1 Hz,RG=10
O
70-140
Y
120-240
V
V
V
-0.1
A
-0.1
A
-0.1
A
400
-0.3
V
-1.1
V
MHz
7
pF
6
dB
GR
200-400