LB125E Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
LB125E
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for lighting applications and switch mode
power supplies.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pluse)
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
IC
PD
TJ
TSTG
600
V
400
V
9
V
5
A
8
A
40
W
+150
o_C
-55 to +150 ^oC
TO-220AB
.405(10.28)
.185(4.70)
.380(9.66)
Φ.151
Φ(3.83)
.173(4.40)
Typ
.055(1.39)
.045(1.15)
.625(15.87)
.570(14.48)
123
.295(7.49)
.220(5.58)
.350(8.90)
.330(8.38)
.640
(16.25)
Typ
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.562(14.27)
.500(12.70)
.100
(2.54)
Typ
.024(0.60)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 600
-
-
Collector-Emitter Breakdown Voltage
BVCEO 400
-
-
Emitter-Base Breakdown Volatge
BVEBO
9
-
-
Collector Cutoff Current
ICBO
-
ICEO
-
-
100
-
100
VCE(sat)1
-
Collector-Emitter Saturation Voltage⁽¹⁾ VCE(sat)2 -
-
0.5
-
0.7
VCE(sat)3
-
-
1.1
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)1
-
VBE(sat)2
-
-
1.1
-
1.2
DC Current Gain⁽¹⁾
hFE1
8
-
35
hFE2
10
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
Test Conditions
V IC=1mA, IE=0
V IC=10mA, IB=0
V IE=10mA, IC=0
µA VCB=800V, IE=0
µA VCE=400V, IB=0
V IC=1A, IB=0.2A
V IC=2A, IB=0.4A
V IC=3A, IB=0.75A
V IC=1A, IB=0.2A
V IC=2A, IB=0.4A
- IC=2A, VCE=5V
- IC=10mA, VCE=5V
Classification of hFE1
Rank
Range
B1
8~17
B2
15~21
B3
19~25
B4
23~31
B5
29~35