LB122T Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR

DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
LB122T
TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
Description
Designed for use in medium power switching
applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25^oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
600
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
6
V
Collector Current (DC)
IC
800
mA
Collector Current (pulse)
IC
1600
mA
Base Current (DC)
IB
100
mA
Base Current (pulse)
Total Power Dissipation(TC=25^oC)
Junction Temperature
Storage Temperature
IB
PD
TJ
TSTG
200
mA
20
W
+150
o_C
-55 to +150 ^oC
.304(7.72)
.285(7.52)
.041(1.05)
.037(0.95)
.154(3.91)
.150(3.81)
.105(2.66)
.095(2.41)
.055(1.39)
.045(1.14)
TO-126
.152(3.86)
.138(3.50)
.279(7.09)
.275(6.99)
1 23
3^oTyp
.620(15.75)
.600(15.25)
.052(1.32)
.048(1.22)
3^oTyp
.032(0.81)
.028(0.71)
.189(4.80)
.171(4.34)
.022
(0.55)
Typ
Dimensions in inches and (millimeters)
3^oTyp
3^oTyp
Electrical Characteristics
(Ratings at 25^oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO 600
-
-
V IC=100µA
Collector-Emitter Breakdown Voltage BVCEO 400
-
-
V IC=10mA
Emitter-Base Breakdown Voltage
BVEBO
6
-
-
V IE=10µA
Collector Cutoff Current
ICBO
-
ICEO
-
-
10
µA VCB=600V
-
10
µA VCE=400V
Emitter Cutoff Current
IEBO
-
-
10
µA VEB=6V
Collector-Emitter Saturation Voltage^{(1) VCE(sat)1}
-
VCE(sat)2
-
Base-Emitter Saturation Voltage⁽¹⁾
VBE(sat)
-
-
0.4
V IC=100mA, IB=20mA
-
0.8
V IC=300mA, IB=60mA
-
1
V IC=100mA, IB=20mA
DC Current Gain⁽¹⁾
hFE1
10
-
40
- IC=0.1A, VCE=10V
hFE2
10
-
-
- IC=0.5A, VCE=10V
Turn-Off Time
Toff
-
-
0.6 µS IC=0.3A, VCC=100V, IB1=-IB2=0.06A
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Classification of hFE1
Rank
Range
B1
10~17
B2
13~22
B3
18~27
B4
23~32
B5
28~37
B6
33~40