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RL251 Datasheet, PDF (1/1 Pages) Rectron Semiconductor – SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.5 Amperes)
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
RL251 THRU RL257
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V
CURRENT:2.5A
FEATURES
·High reliability
·Low leakage
·Low forward voltage drop
·High current capability
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
·Weight: 0.60 grams
R-3
1.0(25.4)
MIN.
.160(4.1)
.138(3.5)
1.0(25.4)
MIN.
.043(1.1)
.039(1.0)
DIA.
.160(4.1)
.138(3.5)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL RL251 RL252 RL253 RL254 RL255 RL256 RL257 units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM 50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Current
at TA=75°C
Io
2.5
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
80
A
method)
Maximum Instantaneous forward Voltage at 2.5A
DC
VF
1.1
V
Maximum DC Reverse Current
@ TA=25°C
5.0
at Rated DC Blocking Voltage
@ TA=100°C IR
Maximum Full Load Reverse Current Average,
Full Cycle .375”(9.5mm) lead length at TL=75°C
Typical Junction Capacitance (Note)
CJ
Typical Thermal Resistance
RθJA
500
µA
30
20
pF
40
°C/W
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
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