ER501 Datasheet, PDF (2/2 Pages) Jiangsu High diode Semiconductor Co., Ltd – DO-27 Plastic-Encapsulate Diodes

Z ibo Seno Electronic Engineering Co., Ltd.
ER501 – ER508
5
100
Single phase half wave
Resistive or Inductive load
ER501 - ER504
4
10
ER505 - ER506
ER507 - ER508
3
1.0
2
1
0
200
25 50 75 100 125 150 175
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
8.3ms single half
sine-wave
100
0.1
0.01
0.6
1.0
T_j = 25°C
Pulse width = 300µs
2% duty cycle
1.4
1.8
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
100
ER501 - ER504
ER505 - ER508
10
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Peak Forward Surge Current
50Ω NI (Non-inductive)
10Ω NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0Ω
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
10
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t_rr
+0.5A
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
ER501 - ER508
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
2 of 2
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