DB101S Datasheet, PDF (2/2 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
DB101S – DB107 S
1.0
10
60 Hz Resistive or
Inductive load
T_j = 25°C
Pulse Width = 300µs
2% duty cycle
1.0
0.5
0.1
0
60
50
40
60 80
100 120 140
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
Single half-sine-Wave
(JEDEC M ethod)
40
0.01
0.4
0.6
0.8
1.0
1.2
1.4
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
100
T_j = 25°c
f = 1.0 Mhz
V_sig = 50 mV p-p
30
10
20
10
0
1
10
100
NUM BER OF CYCLES AT 60 Hz
Fig. 3 M ax Non-Repetitive Peak Forward Surge Current
100
1
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 4 Typ Junction Capacitance (per element)
T_j = 125°C
10
1.0
T_j = 25°C
0.1
DB101S - DB107S
0.01
0
20 40 60
80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
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