1H1G Datasheet, PDF (2/2 Pages) GOOD-ARK Electronics – Glass Passivated High Efficient Rectifiers

Z ibo Seno Electronic Engineering Co., Ltd.



1.00
0.75
0.50
Single phase half wave
Resistive or Inductive load
1H1G – 1H8 G
T_j = 25°C
10
Pulse width = 300µs
1H1G-1H4G
1H5G
1.0
0.25
0
0
30
25 50 75 100 125 150 175
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
Pulse width
8.3 ms single half-sine-wave
(JEDEC method)
0.1
1H6G-1H8G
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
T_j = 25°C
f = 1.0MHz
1H1G-1H5G
20
10
1H6G-1H8G
10
0
1
NUMBER OF C10YCLES AT 60Hz
100
Fig. 3 Peak Forward Surge Current
50Ω NI (Non-inductive)
10Ω NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0Ω
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
1
1
+0.5A
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t_rr
0A
-0.25A
Notes:
1. Rise
2. Rise
Time
Time
=
=
170.0nnssmmaaxx..InInppuuttImImppeeddaannccee==510.0^{ΩM. Ω,}
22pF.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
1H1G – 1H8 G
2 of 2
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