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US5A Datasheet, PDF (1/2 Pages) Semikron International – Ultrafast silicon rectifier diodes
Z ibo Seno Electronic Engineering Co., Ltd.
Features
US5 A – US5 M
5 .0A SURFACE MOUNT ULTRAFAST DIODE
! Ideally Suited for Automatic Assembly
B
! Low Forward Voltage Drop, High Efficiency
D
! Surge Overload Rating to 1 0 0A Peak
! Low Power Loss
A
! Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
J
C
H
G
E
Classification Rating 94V-O

Mechanical Data
! Case: SMB/DO-214AA,SMC/DO-214AB, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: SMB Weight: 0.093 grams (approx.)
SMC Weight: 0.20 grams (approx.)
! Lead Free: For RoHS / Lead Free Version
SMB
SMC
Dim Min Max Min Max
A 3.30 3.94 5.59 6.22
B 4.06 4.57 6.60 7.11
C 1.96 2.21 2.75 3.18
D 0.15 0.31 0.15 0.31
E 5.00 5.59 7.75 8.13
G 0.10 0.20 0.10 0.20
H 0.76 1.52 0.76 1.52
J 2.00 2.62 2.00 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TL = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 5.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
trr
Cj
RJL
Tj, TSTG
US5 A US5 B US5 D US5 G US5 J US5 K US5 M Unit
50 100 200 400 600 800 1000
V
35 70 140 280 420 560 800
V
5.0
A
100
A
1.0
1.3
10
500
50
25
30
-65 to +150
1.7
75
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
US5 A – US5 M
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