SS12W Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
SS12W – SS1200W
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly
! Low Power Loss, High Efficiency
! Surge Overload Rating to 2 0A Peak
! For Use in Low Voltage Application
! Guard Ring Die Construction
! Plastic Case Material has UL Flammability
SOD - 123FL
Cathode Band
Top View
Classification Rating 94V-O
















































































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Mechanical Data
! Case: SOD-123, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.01 grams (approx.)
! Lead Free: For RoHS / Lead Free Version
0.60.25
3.70.2
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Symbol SS12W SS13W SS14W SS15W SS16W SS18W SS110W SS1150WSS1200W Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
20
30
40
50
60
80
100 150 200
V
VR
VR(RMS)
14
21
28
35
42
56
70 105 140
V
Average Rectified Output Current @T_L = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance
Operating Temperature Range
Storage Temperature Range
IO
IFSM
VFM
IRM
R
JL
R
JA
Cj
Tj
TSTG
0.55
110
1.0
20
0.70
0.85
0.5
20
28
88
30
-65 to +125
-65 to +150
A
A
0.95
V
mA
°C/W
110
pF
°C
°C
Note: 1. Mounted on P.C. Board with 5.0mm² copper pad area.
SS12W – SS1200W
1 of 2
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