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SR330L Datasheet, PDF (1/2 Pages) Zibo Seno Electronic Engineering Co.,Ltd – 3.0A LOW VF SCHOTTKY BARRIER DIODE
Z ibo Seno Electronic Engineering Co., Ltd.
SR330L – SR3200L
3.0A LOW VF SCHOTTKY BARRIER DIODE
Features
! Low VF Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
A
B
A
Inverters, Free Wheeling, and Polarity
Protection Applications
C
D
Mechanical Data
! Case: DO-201AD, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 1.2 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
DO-201AD
Dim
Min
Max
A
245.45
—
B
87.520
9.50
C
1.210
1.30
D
55..000
5.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@TL = 75°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
@IF = 3.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Symbol SR330L SR340L SR345L SR350L SR360L SR380L SR3100LSR3150LSR3200L Unit
VRRM
VRWM
30
40
45
50
60
80 100 150 200
V
VR
VR(RMS)
21
28 31.5 35
42
56
70 105 140
V
IO
3.0
A
IFSM
VFM
IRM
Cj
RJA
Tj, TSTG
0.45
500
80
0.5
0.5
10
0.6
0.85
0.05
5
350
25
-55 to +150
A
V
mA
pF
°C/W
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SR330L – SR3200L
1 of 2
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