SR120 Datasheet, PDF (1/2 Pages) Won-Top Electronics – 1.0A SCHOTTKY BARRIER RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
SR120 – SR1200
1.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
A
B
A
Inverters, Free Wheeling, and Polarity
Protection Applications
C

















































































D
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
DO-41
Dim
Min
Max
A
24.5
—
B
4.06
5.21
C
0.60
0.80
D
2.00
3.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol SR120 SR130 SR140 SR150 SR160 SR180 SR1100 SR1150 SR1200 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM
20
30
40
50
60
80
100 150 200
V
VR
VR(RMS)
14
21
28
35
42
56
70 105 140
V
Average Rectified Output Current @T_L = 75°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I_F = 1.0A
@T_A = 25°C
@T_A = 100°C
Typical Thermal Resistance (Note 1)
VFM
IRM
R
JL
R
JA
0.55
Operating Temperature Range
Tj
Storage Temperature Range
TSTG
1.0
30
0.70
0.85
0.5
20
28
88
-65 to +125
-65 to +150
A
A
0.92
V
mA
°C/W
°C
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SR120 – SR1200
1 of 2
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