SB08T80L Datasheet, PDF (1/3 Pages) Zibo Seno Electronic Engineering Co.,Ltd – 8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Z ibo Seno Electronic Engineering Co., Ltd.
SB08T80L-SB08T200L
8.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Bypass Diodes for Solar Panels
! High Junction Temperture
! High Thermal Reliability
! Patented Super Barrier Rectifier Technology
! High Foward Surge Capability
! Ultra Low Power Loss, High Efficiency
! Excellent High Temperature Stability
Top View
Bottom View
Mechanical Data
! Case:TO-277B Molded Plastic "Green" Molding Compound
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS/Lead Free Version
LEFT PIN
RIGHT PIN
BOTTOMSIDE
HEAT SINK
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC blocking voltage
Symbol
V _RRM
V_RWM
V_DC
SB
08T80L
80
SB
08T100L
100
SB
08T120L
120
SB
08T150L
150
RMS Rectified Voltage
V_R(RMS)
56
70
84
105
Average Rectified Output Current (Note1)
IO
8.0
Non-Repetitive Peak Forward Surge8.3ms
Single Half Sine-Wave Superimposed on rated
IFSM
150
load(JEDEC Method) (Note2)
I ² t Rating for Fusing (t < 8.3ms)
I²t
93.4
Forward Voltage Drop
TA =25 ℃ @IF=1A
TA =25 ℃ @IF=3A
TA =25 ℃ @IF=8A
Typ Max. Typ Max.
0.47 -
0.47 -
V FM
0.52 0.60 0.52 0.60
0.60 0.67 0.60 0.67
0.85
0.85
Peak Reverse Curent
TA=25 ℃
IR
0.3
At Rated DC Blocking Voltage T_A=100 ℃
15
Typical Thermal Resistance
R _θJA
80
Junctionto Ambient
R θJL
15
Operating junction temperature range
TJ
-55 to +150
storage temperature range
TSTG
-55 to +150
Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case.
2.Fr-4pcb.2oz.Copper,minimum recommend pad layout .18.8mm×14.4.Anode pad dimensions 5.6mm×14.4mm.
SB
Unit
08T200L
200
V
140
V
A
A
A²s
V
0.85
mA
℃ /W
℃
℃
SB08T80L-SB08T200L
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