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MURF1010 Datasheet, PDF (1/2 Pages) DIYI Electronic Technology Co., Ltd. – Low power loss, high efficiency
Z ibo Seno Electronic Engineering Co., Ltd.
MURF1010 – MURF1060
10.0A GLASS PASSIVATED SUPERFAST RECTIFIER
Features
! Glass Passivated Die Construction
! Super-Fast Switching
! Low Forward Voltage Drop
! Low Reverse Leakage Current
! High Surge Current Capability
! Plastic Material has UL Flammability
B
C
G
Classification 94V-O

PIN1
3
D
Mechanical Data
! Case: ITO-220AC, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Weight: 2.24 grams (approx.)
! Mounting Position: Any
! Lead Free: For RoHS / Lead Free Version
F
P
I
H
ITO-220AC
ITO-220AC
Dim
Min
Max
A
14.50
15.50
A
B
9.50
10.50
C
2.55
2.90
D
3.30
4.30
E
13.00
14.00
F
0.30
0.90
E
G
3.00 Ø 3.80 Ø
H
6.30
7.30
I
4.20
4.80
J
2.50
2.90
K
0.47
0.75
L
2.50
3.10
P
4.88
5.28
L
All Dimensions in mm
PIN 1 +
PIN 3 -
+
Case
J
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
VRRM
VRWM
VR
VR(RMS)
MURF MURF MURF MURF MURF MURF
1010 1020 1030 1040 105 0 1060
100 200 300 400 500
600
70
140 210 280 350
420
Unit
V
V
Average Rectified Output Current @TC = 100°C
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
(JEDEC Method)
Forward Voltage
@IF= 10.0A
V FM
1.0
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
IRM
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
Operating and Storage Temperature Range
Tj, TSTG
10.0
A
90
A
1.3
1.7
V
10
400
µA
35
nS
200
pF
-55 to +150
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MURF1010 – MURF1060
1 of 2
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