MUR105 Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 1.0 AMPS. ULTRA FAST RECTIFIERS

Z ibo Seno Electronic Engineering Co., Ltd.
Features
! Diffused Junction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
MUR105 – MUR160
1.0A HIGH EFFICIENCY RECTIFIER
A
B
A
Mechanical Data
! Case: Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
C
D
DO-41
Dim
Min
Max
A
24.5
—
B
4.06
5.21
C
0.60
0.80
D
2.00
3.00
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
MUR MUR MUR MUR MUR MUR MUR
105 110 115 120 130 140 160
Unit
VRRM
VRWM
50 100 150 200 300 400 600
V
VR
RMS Reverse Voltage
VR(RMS)
35
70 105 140 210 280 420
V
Average Rectified Output Current
(Note 1)
@T_A = 55°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
I
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
1.0
A
30
A
1.0
1.3 1.7
V
5.0
150
µA
50
75
nS
Typical Junction Capacitance (Note 3)
Cj
25
pF
Operating Temperature Range
Tj
-65 to +150
°C
Storage Temperature Range
TSTG
-65 to +150
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MUR105 – MUR160
1 of 2
www.senocn.com