MBRF840 Datasheet, PDF (1/2 Pages) Rugao Dachang Electronics Co., Ltd – Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 8.0 A

Z ibo Seno Electronic Engineering Co., Ltd.
MBRF840-MBRF8200
8.0 A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly
! Low Power Loss, High Efficiency
B
C
! For Use in Low Voltage Application
! Guard Ring Die Construction
G
A
! Plastic Case Material has UL Flammability
C
l
a
s
s
ification Rating 94V-O
PIN1
3








































_D
Mechanical Data
! Case: ITO-220AC, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Mounting Position: Any
! Lead Free: For RoHS / Lead Free Version
F
E
P
I
H
L
ITO-220AC
Dim
Min
Max
A
14.50
15.50
B
9.50
10.50
C
2.55
2.90
D
3.30
4.30
E
13.00
14.00
F
0.30
0.90
G
3.00 Ø 3.80 Ø
H
6.30
7.30
I
4.20
4.80
J
2.50
2.90
K
0.47
0.75
L
2.50
3.10
P
4.88
5.28
All Dimensions in mm
PIN 1 +
PIN 3 -
+
Case
J
K
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
MBRF MBRF MBRF MBRF MBRF MBRF
Symbol ₈₄₀
845
850 860
880 8100
MBRF
8150
MBRF
8200
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
40
45
VR
50
60
80 100 150 200
V
RMS Reverse Voltage
VR(RMS)
28
31
35
42
56
70 105 140
V
Average Rectified Output Current @T_L = 100°C
(Note 1)
IO
8. 0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
100
(JEDEC Method)
120
A
Forward Voltage
@I_F = 8A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
IRM
Typical Junction Capacitance (Note 2)
Cj
0.70
350
0.80
0.85
0.92
V
0.1
20
mA
280
200
pF
Typical Thermal Resistance (Note 1)
R
JA
3.5
2.0
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
-55 to +175 °C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MBRF840-MBRF8200
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