MBR840G Datasheet, PDF (1/2 Pages) Zibo Seno Electronic Engineering Co.,Ltd – 8.0 A SCHOTTKY BARRIER DIODE

Z ibo Seno Electronic Engineering Co., Ltd.
MBR840G-MBR8200G
8.0 A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly
! Low Power Loss, High Efficiency
! For Use in Low Voltage Application
! Guard Ring Die Construction
! Plastic Case Material has UL Flammability
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ification Rating 94V-O









































TO-263/D²PAK
Mechanical Data
! Case: TO-263/D ²PAK, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Mounting Position: Any
! Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
MBR
840G
MBR MBR MBR MBR MBR MBR
845G 850G 860G 880G 8100G 8150G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
40
45
50
60
80 100 150
VR
MBR
8200G
200
Units
V
RMS Reverse Voltage
VR(RMS)
28
31
35
42
56
70 105 140
V
Average Rectified Output Current @T_L = 75° C
(Note 1)
IO
8. 0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
150
A
(JEDEC Method)
Forward Voltage
@I_F = 8A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Typical Junction Capacitance (Note 2)
V FM
IRM
Cj
0.60
350
0.70
0.85
0.92
V
0.1
20
mA
280
200
pF
Typical Thermal Resistance (Note 1)
R
JA
15
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +125
-55 to +150
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MBR840G-MBR8200G
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