MBR1040CP Datasheet, PDF (1/2 Pages) DIYI Electronic Technology Co., Ltd. – SCHOTTKY BARRIER RECTIFIERS

Z ibo Seno Electronic Engineering Co., Ltd.
MBR1040CP-MBR10200CP
10.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly
! Low Power Loss, High Efficiency
! For Use in Low Voltage Application
! Guard Ring Die Construction
! Plastic Case Material has UL Flammability
C
l
a
s
s
ification Rating 94V-O









































TO-251/IPAK
Mechanical Data
! Case: TO-251/IPAK, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Mounting Position: Any
! Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
MBR MBR MBR MBR
1040CP 1045CP 1050CP 1060CP
40
45
50
60
MBR
1080CP
MBR MBR MBR
10100CP 10150CP 10200CP
Units
80 100 150 200
V
RMS Reverse Voltage
VR(RMS)
28
31
35
42
56
70 105 140
V
Average Rectified Output Current @T_L = 100°C
(Note 1)
IO
10.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
100
A
(JEDEC Method)
Forward Voltage
@I_F = 5A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Typical Junction Capacitance (Note 2)
V FM
IRM
Cj
0.70
350
0.80
0.85
0.92
V
0.1
20
mA
280
200
pF
Typical Thermal Resistance (Note 1)
R
JA
15
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
-55 to +175
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MBR1040CP-MBR10200CP
1 of 2
www.senocn.com