MBR1040CK Datasheet, PDF (1/2 Pages) Zibo Seno Electronic Engineering Co.,Ltd – 10.0A SCHOTTKY BARRIER DIODE

Z ibo Seno Electronic Engineering Co., Ltd.
MBR1040CK-MBR10200CK
10.0A SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly
! Low Power Loss, High Efficiency
! For Use in Low Voltage Application
! Guard Ring Die Construction
! Plastic Case Material has UL Flammability
C
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ification Rating 94V-O









































TO-262/I² PAK
Mechanical Data
! Case: TO-262/I ²PAK, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Mounting Position: Any
! Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
MBR
1040CK
MBR
1045CK
MBR MBR
1050CK 1060CK
MBR MBR MBR MBR
1080CK 10100CK 10150CK 10200CK
Units
40
45
50
60
80 100 150 200
V
RMS Reverse Voltage
VR(RMS)
28
31
35
42
56
70 105 140
V
Average Rectified Output Current @T_L = 100°C
(Note 1)
IO
10.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
100
(JEDEC Method)
110
A
Forward Voltage
@I_F = 5A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Typical Junction Capacitance (Note 2)
V FM
IRM
Cj
0.70
350
0.80
0.85
0.92
V
0.1
20
mA
280
200
pF
Typical Thermal Resistance (Note 1)
R
JA
15
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
-55 to +175
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
MBR1040CK-MBR10200CK
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