LLDB3 Datasheet, PDF (1/2 Pages) Formosa MS – DIAC

Z ibo Seno Electronic Engineering Co., Ltd.
LLDB3/LLDB4
Features
SILICON BIDIRECTIONAL DIACS
The three layer, two terminal, axial lead,hermetically sealed diacs are designed
specifically for triggering thyristors. They demonstrate low breakover current at
breakover voltage as they withstand peak pulse current, The breakover symmetry is
within three volts (DB3,DB4). These diacs are intended for use in thyrisitors phase
control , circuits for lamp dimming,universa motor speed control ,and heat control.
Mechanical Data
! Case: MiniMELF Glass Case (SOD-80)
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Color band denotes cathode end
! Weight: 0.05 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
A
B
C
MiniMELF
Dim
MIn
Max
A
3.30
3.70
B
1.30
1.60
C
0.28
0.50
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C
ABSOLUTE RATINGS
PARAMETERS
Power Dissipation on Printed
Cir cuit(L=10mm)
TA=50℃
SYMBOL
Pc
VALUE
LLDB3 / LLDB4
150
UNITS
mW
Repetitive Peak on-state
Current
Tp=10uS
f=100HZ
Storage and Operating Juntion Temperature
ELECTRICAL CHARACTERISTICS
PAPRAMETERS
Breakover Voltage*
Breakover Voltage Symmetry
Dynamic Breakover Voltage
Output Voltage*
Breakover Current*
Rise Time*
ITRM
TSTG/TJ
2.0
A
-40 to +125
℃
SYMBOLS
VBO
1+VBOI-
1-VBOI
1 ±△V1
VO
IBO
tr
TEST CONDITIONS
Min
C=22nf**
See Diagram 1
Typ
Max
C=22nf**
Max
See Diagram 1
△I=(IBO to IF=10mA)
Min
See FIG 1
See FIG 2
Min
C=22nf**
Max
See FIG 3
Typ
VALUE
UNITS
LLDB3 LLDB4
28
35
32
45
V
36
45
±3
V
5
V
5
V
100
uA
1.5
uS
Leakage Current*
IB=0.5 VBO MAX
IB
Max
10
uA
See FIG 3
NOTE:* Electrical characteristics applicable in both forward and reverse directions.
** Connected in parallel with the devices.
LLDB3/LLDB4
1 of 2
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