HFM101 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere)

Z ibo Seno Electronic Engineering Co., Ltd.
HFM101 – HFM108
1.0A GLASS PASSIVATED ULTRAFAST RECOVERY DIODE
Features
! Glass passivated device
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
SOD - 123FL
! Surge Overload Rating to 2 5 A Peak
! Low Power Loss
Cathode Band
Top View
! Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
! Classification Rating 94V-O
















































































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Mechanical Data
! Case: SOD-123FL, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.01 grams (approx.)
! Lead Free: For RoHS / Lead Free Version
0.60.25
3.70.2
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Device marking code
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T_L = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
t rr
Cj
R
JL
Tj, TSTG
HFM HFM HFM HFM HFM HFM HFM HFM _UNITS
101 102 103
104 105 106 107 108
50 100 200 300 400 600 800 1000
V
1.0
25
1.0
1.3
1.7
10
500
50
75
4
30
-65 to +150
A
A
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
HFM101 – HFM108
1 of 2
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