GU1A Datasheet, PDF (1/2 Pages) Gulf Semiconductor – SURFACE MOUNT SWITCHING RECTIFIER VOLTAGE：50 TO 1000V CURRENT： 1.0A

Z ibo Seno Electronic Engineering Co., Ltd.
Features
GU1A – GU1M
1.0A SURFACE MOUNT ULTRAFAST DIODE
! Ideally Suited for Automatic Assembly
B
! Low Forward Voltage Drop, High Efficiency
! Surge Overload Rating to 30A Peak
D
! Low Power Loss
A
! Ultra-Fast Recovery Time
F
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
HG





















































































E
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
! Lead Free: For RoHS / Lead Free Version
SMA/DO-214AC
Dim
Min
Max
A
2.50
2.90
B
4.00
4.60
C
1.20
1.60
D
0.152
0.305
E
4.80
5.28
F
2.00
2.44
G
0.051
0.203
H
0.76
1.52
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Symbol GU1A GU1B GU1D GU1G GU1J GU1K GU1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T_L = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
trr
Cj
R
JL
Tj, TSTG
50 100 200 400 600 800 1000
V
35 70 140 280 420 560 800
V
1.0
A
30
A
1.0
1.4
10
500
50
15
30
-65 to +150
1.7
75
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
GU1A – GU1M
1 of 2
www.senocn.com