ES1AW Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SUPERFAST RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
ES1AW – ES1JW
1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE
Features
! Glass passivated device
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
SOD - 123FL
! Surge Overload Rating to 2 5 A Peak
! Low Power Loss
Cathode Band
Top View
! Ultra-Fast Recovery Time
! Plastic Case Material has UL Flammability
! Classification Rating 94V-O
















































































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Mechanical Data
! Case: SOD-123FL, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.01 grams (approx.)
! Lead Free: For RoHS / Lead Free Version
0.60.25
3.70.2
Dimensions in millimeters
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T_L = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol ES1AW ES1B WES1CW ES1DW ES1EW ES1GWES1HWES1JW UNITS
VRRM
VRWM
50 100 150 200 300 400 500 600
V
VR
VR(RMS)
35 70 105 140 210 280 350 420
V
IO
1.0
A
IFSM
25
A
VFM
IRM
t rr
Cj
R
JL
Tj, TSTG
1.0
1.3
10
500
35
4
30
-65 to +150
1.7
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with I_F = 0.5A, I_R = 1.0A, I_rr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm² land area.
ES1AW – ES1JW
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