EMS1F Datasheet, PDF (1/2 Pages) Zibo Seno Electronic Engineering Co.,Ltd – SUPER FAST SURFACE MOUNT 1.0A GLASS PASSIVATED BRIDGE RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
EMB1F – EMB6F
Features
1.0A SUPER FAST SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Surge Current Capability
! Designed for Surface Mount Application
! Plastic Material – UL Flammability 94V-O
-
B
+
H
~
~
G
DE





















































A
Mechanical Data
J
! Case: MB-F, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
K
! Polarity: As Marked on Case
! Weight: 0.134 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
MB-F
Dim
Min
Max
A
4.50
4.95
B
3.60
4.10
C
0.15
0.35
D
—
0.20
E
6.40
7.00
G
0.50
1.10
H
1.30
1.70
J
1.20
1.60
K
2.30
2.70
L
—
1.80
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
EMB1F
EMB2F
EMB4F
EMB6F Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
100
VR
RMS Reverse Voltage
VR(RMS)
70
Average Rectified Output Current (Note 1) @T_A = 40°C
Average Rectified Output Current (Note 2) @T_A = 40°C
IO
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
(JEDEC Method)
I²t Rating for Fusing (t < 8.3ms)
I²t
Forward Voltage per element
@I_F = 1.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@T_A = 25°C
@T_A = 125°C
IRM
Reverse Recovery Time (Note 4)
trr
Typical Junction Capacitance per leg (Note 3)
Cj
Typical Thermal Resistance per leg (Note 1)
R
JA
R
JL
Operating and Storage Temperature Range
Tj, TSTG
Note: 1. Mounted on glass epoxy PC board with 1.3mm² solder pad.
2. Mounted on aluminum substrate PC board with 1.3mm² solder pad.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
4. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
200
400
140
280
1.0
35
5.0
0.95
1.25
5.0
500
35
13
62.5
25
-55 to +150
600
V
560
V
A
A
A²s
1.7
V
µA
nS
pF
°C/W
°C
EMB1F - EMB6F
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