DB251S Datasheet, PDF (1/2 Pages) Zibo Seno Electronic Engineering Co.,Ltd – 2.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

Z ibo Seno Electronic Engineering Co., Ltd.
DB251S – DB257 S
2.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Features
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
Mechanical Data
Case: DB -S, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Weight: 0.38 grams (approx.)
Mounting Position: Any
Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
-
B
~
L
J
+
~
H
K
G
A
C
DE
DB-S
Dim
Min
Max
A
7.40
7.90
B
6.20
6.50
C
0.25
—
D
0.08
0.33
E
9.30
10.30
G
1.02
1.53
H
8.00
8.51
J
2.15
3.40
K
5.00
5.20
L
0.90
1.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TA = 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage per element
@IF = 2.5A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 125°C
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance per leg (Note 2)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
DB DB
251S 252S
50 100
35
70
DB DB DB DB
253S 254S 255S 256S
200 400 600 800
140 280 420 560
DB
257 S
1000
700
Unit
V
V
IO
2.5
A
IFSM
60
A
VFM
IRM
Cj
RθJA
RθJL
Tj, TSTG
1.1
5.0
500
25
40
15
-65 to +150
V
µA
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on PC board with 13mm² copper pad.
DB251S - DB257S
1 of 2
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