D5SB05 Datasheet, PDF (1/2 Pages) Rugao Dachang Electronics Co., Ltd – Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 800V Forward Current 6A

Z ibo Seno Electronic Engineering Co., Ltd.
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
· Surge Overload Rating to 170A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability
Classification 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity: Molded on Body
· Mounting: Through Hole for #6 Screw
· Mounting Torque: 5.0 in-lbs Maximum
· Weight: 6.6 grams (approx)
· Marking: Type Number
D5SB05 - D5SB100
6.0A GLASS PASSIVATED BRIDGE RECTIFIER
5S
Dim Min Max
A 29.70 30.30
B 19.70 20.30
K
A
C 17.00 18.00
L
D
3.80 4.20
M
E
7.30 7.70
G
9.80 10.20
B
_
S
N
H
2.00 2.40
I
0.90 1.10
J
D
P
J
2.30 2.70
H
C
K
3.0 X 45°
R
L
4.40 4.80
I
M
3.40 3.80
N
3.10 3.40
G EE
P
2.50 2.90
R
0.60 0.80
S 10.80 11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
RMS Reverse Voltage
V_R(RMS)
Average Forward Rectified Output Current @ T_C = 110°C I_O
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
I_FSM
(JEDEC method)
Forward Voltage per element
@ I_F = 3.0A V_FM
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC= 125°C
IR
I²t Rating for Fusing (t < 8.3ms) (Note 1)
I²t
Typical Junction Capacitance per Element (Note 2)
C_j
Typical Thermal Resistance Junction to Case (Note 3)
R_qJC
Operating and Storage Temperature Range
T_j, T_STG
D5SB
05
50
35
D5SB
10
100
70
D5SB D5SB D5SB
20
40
60
200 400 600
140 280 420
6.0
170
1.0
5.0
500
120
55
1.8
-65 to +150
D5SB
80
800
560
D5SB
100
Unit
1000 V
700 V
A
A
V
µA
A²s
pF
°C/W
°C
Notes:
1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
D5SB05 - D5SB100
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